2SC1623_0712 [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
2SC1623_0712
型号: 2SC1623_0712
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管
文件: 总4页 (文件大小:166K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC1623  
FEATURES  
z
z
High DC current gain:hFE=200TYP  
Pb  
Lead-free  
(VCE=6.0V,IC=1.0mA)  
High Voltage:VCEO=50V  
APPLICATIONS  
z
NPN Silicon Epitaxial Planar Transistor  
z
Audio frequency general purpose amplifier.  
SOT-23  
ORDERING INFORMATION  
Type No.  
2SC1623  
Marking  
Package Code  
SOT-23  
L4/L5/L6/L7  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
60  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
50  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
100  
200  
mA  
mW  
PC  
Junction and Storage Temperature  
Tj,Tstg  
-55~150  
Document number: BL/SSSTC0018  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC1623  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN  
60  
50  
5
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100μA,IE=0  
IC=1mA,IB=0  
IE=100μA,IC=0  
VCB=60V,IE=0  
VEB=5V,IC=0  
V
V
V
0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
0.1  
DC current gain  
hFE  
VCE=6V,IC=1mA  
90  
200  
600  
Collector-emitter saturation voltage  
IC=100mA, IB=10mA  
VCE(sat)  
0.15 0.3  
0.86 1.0  
V
V
Base-emitter saturation voltage  
IC=100mA, IB=10mA  
VBE(sat)  
Transition frequency  
Output capacitance  
VCE=6V, IE= 10mA  
fT  
250  
3.0  
MHz  
MHz  
VCB=6V, IE= 0,f=1.0MHz  
Cob  
CLASSIFICATION OF hFE(1)  
Rank  
L4  
90-180  
L4  
L5  
135-270  
L5  
L6  
200-400  
L6  
L7  
Range  
300-600  
L7  
Marking  
Document number: BL/SSSTC0018  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC1623  
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSTC0018  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SC1623  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
G
H
J
0.1Typical  
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
2SC1623  
3000/Tape&Reel  
Document number: BL/SSSTC0018  
Rev.A  
www.galaxycn.com  
4

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